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| mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 1 rf device data freescale semiconductor, inc. rf power ldmos transistors enhancement--mode lateral mosfets designed for commercial and industrial broadband applications with frequencies from 470 to 860 mhz. devices are suitable for use in br oadcast applications. ? typical performance (narrowband test circuit): v dd =50volts,i dq = 350 ma, 64 qam, input signal par = 9. 5 db @ 0.01% probability on ccdf. signal type p out (w) f (mhz) g ps (db) d (%) acpr (dbc) dvb--t (8k ofdm) 18 avg. 860 22.0 28.5 --62.0 ? typical performance (broadband reference circuit): v dd =50volts, i dq = 450 ma, 64 qam, input signal par = 9.5 db @ 0.01% probability on ccdf. signal type p out (w) f (mhz) g ps (db) d (%) output signal par (db) imd shoulder (dbc) dvb--t (8k ofdm) 18 avg. 470 21.6 26.8 8.6 --31.8 650 22.9 28.0 8.7 --34.4 860 21.9 28.3 7.9 --29.2 features ? capable of handling 10:1 vswr, all phase angles, @ 50 vdc, 860 mhz, 90 watts cw output power ? characterized with series equival ent large--signal impedance parameters ? internally input matched for ease of use ? qualified up to a maximum of 50 v dd operation ? integrated esd protection ? excellent thermal stability ? greater negative gate--source voltage range for improved class c operation ? 225 c capable plastic package ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. r5 suffix = 50 units, 56 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +110 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 76 c, 18 w cw, 50 vdc, i dq = 350 ma, 860 mhz case temperature 80 c, 90 w cw, 50 vdc, i dq = 350 ma, 860 mhz r jc 0.79 0.82 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf6v3090n rev. 1, 12/2011 freescale semiconductor technical data 470--860 mhz, 90 w, 50 v broadband rf power ldmos transistors parts are single--ended (top view) drain figure 1. pin connections drain gate gate note: exposed backside of the package is the source terminal for the transistor. case 1484--04, style 1 t o -- 2 7 2 w b -- 4 plastic mrf6v3090nbr1(nbr5) case 1486--03, style 1 t o -- 2 7 0 w b -- 4 plastic mrf6v3090nr1(nr5) mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 ? freescale semiconductor, inc., 2010--2011. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (2001--4000 v) machine model (per eia/jesd22--a115) b (201--400 v) charge device model (per jesd22--c101) iv (>1000 v) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 0.5 adc drain--source breakdown voltage (i d =50ma,v gs =0vdc) v (br)dss 115 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 20 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 200 adc) v gs(th) 0.9 1.6 2.4 vdc gate quiescent voltage (v dd =50vdc,i d = 350 madc, measured in functional test) v gs(q) 2.0 2.7 3.5 vdc drain--source on--voltage (v gs =10vdc,i d =0.5adc) v ds(on) ? 0.2 ? vdc dynamic characteristics reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 41 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 65.4 ? pf input capacitance (1) (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 591 ? pf functional tests (in freescale dvb--t narrowband test fixture, 50 ohm system) v dd =50vdc,i dq = 350 ma, p out =18wavg., f = 860 mhz, dvb--t (8k ofdm) single channel. acpr measured in 7.61 mhz channel bandwidth @ 4 mhz offset @ 4 khz bandwidth. power gain g ps 21.0 22.0 24.0 db drain efficiency d 27.5 28.5 ? % adjacent channel power ratio acpr ? --62.0 --60.0 dbc input return loss irl ? -- 1 4 -- 9 db 1. part internally input matched. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 3 rf device data freescale semiconductor, inc. figure 2. mrf6v3090nr1(nbr1) 860 mhz n arrowband test circuit schematic z10, z11 1.292 0.079 microstrip z12 0.680 0.571 microstrip z13 0.132 0.117 microstrip z14 0.705 0.117 microstrip z15 0.159 0.117 microstrip z16 0.140 0.067 microstrip z17 0.077 0.067 microstrip z18 0.163 0.067 microstrip z1 0.266 0.067 microstrip z2 0.331 0.067 microstrip z3 0.598 0.067 microstrip z4 0.315 0.276 microstrip z5 0.054 0.669 microstrip z6 0.419 0.669 microstrip z7 0.256 0.669 microstrip z8 0.986 0.071 microstrip z9 0.201 0.571 microstrip z1 rf input c5 z2 z3 z4 z5 z7 dut z13 c14 rf output z15 v bias v supply r1 c9 c10 c8 c1 c3 z9 z17 z14 c12 c11 r2 c6 c16 c17 c18 + + z10 z11 z8 c2 z6 c7 c4 z12 z18 z16 c15 c13 + table 6. mrf6v3090nr1(nbr1) 860 mhz narrowband t est circuit component designations and values part description part number manufacturer c1 22 f, 35 v tantalum capacitor t491x226k035at kermet c2, c9, c17 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c3, c5, c8, c14, c16 43 pf chip capacitors atc100b430jt500xt atc c4 6.2 pf chip capacitor atc100b6r2bt500xt atc c6 2.2 pf chip capacitor atc100b2r2jt500xt atc c7 9.1 pf chip capacitor ATC100B9R1CT500XT atc c10, c18 220 f, 100 v electrolytic capacitors eevfk2a221m panasonic--ecg c11, c15 7.5 pf chip capacitors atc100b7r5ct500xt atc c12 3.0 pf chip capacitor atc100b3r0ct500xt atc c13 0.7 pf chip capacitor atc100b0r7bt500xt atc r1 10 k ? , 1/4 w chip resistor crcw120610kojnea vishay r2 10 ? , 1/4 w chip resistor crcw120610rojnea vishay pcb 0.030 , r =3.5 rf--35 taconic 4 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 figure 3. mrf6v3090nr1(nbr1) 860 mhz na rrowband test circuit component layout mrf6v3090n rev. 0 -- -- r1 r2 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 c17 c18 cut out area mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 5 rf device data freescale semiconductor, inc. typical characteristics d g ps v dd =50vdc,i dq = 350 ma, f = 860 mhz 50 10 1000 020 10 v ds , drain--source voltage (volts) figure 4. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 100 40 c oss measured with 30 mv(rms)ac @ 1 mhz, v gs =0vdc 24 1 0 70 100 23 21 19 60 50 40 30 p out , output power (watts) figure 5. cw power gain and drain efficiency versus output power (narrowband test circuit) g ps , power gain (db) d, drain efficiency (%) 22 20 17 200 20 47 56 -- 6 54 p in , input power (dbm) figure 6. cw output power versus input power (narrowband test circuit) 53 4 52 -- 2 0 2 p out , output power (dbm) p3db = 51.28 dbm (134.3 w) actual ideal 16 25 10 23 21 p out , output power (watts) figure 7. cw power gain versus output power (narrowband test circuit) g ps , power gain (db) 30 20 130 150 figure 8. cw power gain and drain efficiency versus output power (narrowband test circuit) p out , output power (watts) g ps , power gain (db) 18 25 1 22 24 23 100 200 v dd =50vdc,i dq = 350 ma, f = 860 mhz i dq = 350 ma, f = 860 mhz 50 49 -- 4 18 50 70 90 110 v dd =40v 50 v 25 _ c t c =--30 _ c 85 _ c g ps 19 21 20 v dd =50vdc,i dq = 350 ma, f = 860 mhz 0 70 10 d, drain efficiency (%) 18 10 c rss 10 p2db = 51.06 dbm (127.6 w) p1db = 50.7 dbm (117.5 w) 55 51 48 17 19 22 24 45 v d t c =--30 _ c 85 _ c 25 _ c 10 20 30 40 50 60 -- 5 -- 3 -- 1 1 3 20 40 60 80 100 120 140 6 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 typical characteristics ? two--tone (narrowband test circuit) figure 9. intermodulation distortion products versus output power -- 7 0 -- 1 0 10 7th order p out , output power (watts) pep v dd =50vdc,i dq = 350 ma, f1 = 854 mhz f2 = 860 mhz, two--tone measurements 3rd order -- 2 0 -- 3 0 -- 4 0 imd, intermodulatio n distortion (dbc) -- 6 0 5th order 1 -- 5 0 figure 10. intermodulation distortion products versus two--tone spacing 10 -- 2 0 1 7th order two--tone spacing (mhz) 5th order 3rd order -- 3 5 -- 4 5 -- 5 5 90 imd, intermodulatio n distortion (dbc) figure 11. two--tone power gain versus output power 20 23.5 1 i dq = 450 ma p out , output power (watts) pep 23 20.5 10 200 g ps , power gain (db) 22.5 21.5 v dd = 50 vdc, f1 = 854 mhz, f2 = 860 mhz two--tone measurements, 6 mhz tone spacing figure 12. third order intermodulation distortion versus output power p out , output power (watts) pep 10 v dd = 50 vdc, f1 = 854 mhz, f2 = 860 mhz two--tone measurements, 6 mhz tone spacing 100 1 -- 6 5 -- 2 5 i dq = 250 ma 300 ma v dd =50vdc,p out = 90 w (pep), i dq = 350 ma f = 860 mhz, two--tone measurements -- 3 0 -- 4 0 -- 5 0 -- 6 0 250 ma 22 21 350 ma 450 ma -- 2 0 -- 4 0 -- 5 0 -- 6 0 -- 1 0 -- 3 0 intermodulation d istortion (dbc) imd, third order 100 200 100 300 ma 350 ma 200 mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 7 rf device data freescale semiconductor, inc. typical characteristics ? dvb--t (8k ofdm) 12 0.0001 100 0 peak--to--average (db) figure 13. single--carrier dvb--t (8k ofdm) 10 1 0.1 0.01 0.001 2468 probability (%) dvb--t (8k ofdm) 64 qam data carrier modulation 5 symbols 5 -- 2 0 -- 5 7.61 mhz f, frequency (mhz) figure 14. dvb--t (8k ofdm) spectrum -- 3 0 -- 4 0 -- 5 0 -- 9 0 -- 7 0 -- 8 0 --100 -- 11 0 -- 6 0 -- 4 -- 3 -- 2 -- 1 0 1 2 3 4 4khzbw (db) 10 acpr measured at 4 mhz offset from center frequency figure 15. single--carrier dvb--t (8k ofdm) power gain versus output power (narrowband test circuit) 23 1 i dq = 450 ma p out , output power (watts) avg. 10 40 g ps , power gain (db) 350 ma v dd = 50 vdc, f = 860 mhz dvb--t (8k ofdm), 64 qam data carrier modulation, 5 symbols 22.5 22 21.5 21 20.5 acpr, adjacent channel power ratio (dbc) figure 16. single--carrier dvb--t (8k ofdm) acpr versus output power (narrowband test circuit) -- 6 8 -- 5 4 1 p out , output power (watts) avg. -- 5 6 10 40 -- 6 0 v dd = 50 vdc, f = 860 mhz dvb--t (8k ofdm), 64 qam data carrier modulation, 5 symbols -- 6 2 i dq = 250 ma 300 ma -- 6 4 -- 6 6 acpr, adjacent channel power ratio (dbc) figure 17. single--carrier dvb--t (8k ofdm) drain efficiency, power gain and acpr versus output power (narrowband test circuit) 0 -- 7 0 p out , output power (watts) avg. 50 -- 4 5 30 10 -- 5 0 1 -- 6 0 40 40 20 -- 5 5 10 -- 6 5 d 25 _ c t c =--30 _ c 85 _ c g ps acpr v dd =50vdc,i dq = 350 ma f = 860 mhz, dvb--t (8k ofdm) 64 qam data carrier modulation 5 symbols 4khzbw dvb--t (8k ofdm) 64 qam data carrier modulation, 5 symbols 250 ma 300 ma -- 5 8 350 ma 450 ma 25 _ c -- 3 0 _ c 85 _ c g ps , power gain (db) d , drain efficiency (%) 8 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 typical characteristics 250 10 9 90 t j , junction temperature ( c) figure 18. mttf versus junction temperature -- cw mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 8 10 5 v dd =50vdc p out =18wavg. d = 28.5% v dd =50vdc,i dq = 350 ma, p out = 18 w average f mhz z source ? z load ? 860 1.58 -- j0.89 3.51 -- j3.98 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 19. series equivalent source and load impedance (narrowband test circuit) z source z load input matching network device under test output matching network mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 9 rf device data freescale semiconductor, inc. 470--860 mhz broadband reference circuit v dd =50volts,i dq = 450 ma, channel bandwidth = 8 mhz, input signal par = 9.5 db @ 0. 01% probability on ccdf. signal type p out (w) f (mhz) g ps (db) d (%) output par (db) imd shoulder (dbc) dvb--t (8k ofdm) 4.5 avg. 470 21.5 11.6 9.9 --37.5 650 22.8 11.8 9.9 --41.7 860 21.8 11.9 9.8 --40.3 9avg. 470 21.6 18.2 9.5 --37.4 650 22.8 18.6 9.7 --40.2 860 21.8 18.9 9.5 --39.0 18 avg. 470 21.6 26.8 8.6 --31.8 650 22.9 28.0 8.7 --34.4 860 21.9 28.3 7.9 --29.2 figure 20. mrf6v3090nr1(nbr1) 470--860 mhz broadband 2 3 compact reference circuit component layout mrf6v3090n rev. 2 c13 r1 c14 c15 c5 c4 c1 c2 c6 c3 q1 c19 c18 c10 c11 c8 c7 c9 c12 c17 c16 c20 v dd v gg 10 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 470--860 mhz broadband reference circuit table 7. mrf6v3090nr1(nbr1) 470--860 mhz broadband 2 3 reference circuit component designations and values part description part number manufacturer c1, c12 100 pf chip capacitors atc100b101jt500xt atc c2 1.8 pf chip capacitor atc100b1r8bt500xt atc c3 6.2 pf chip capacitor atc100b6r2bt500xt atc c4, c5, c6 13 pf chip capacitors atc100b130jt500xt atc c7, c8, c11 2.2 pf chip capacitors atc100b2r2jt500xt atc c9 15 pf chip capacitor atc100b150jt500xt atc c10 3.9 pf chip capacitor atc100b3r9ct500xt atc c13 47 f, 16 v tantalum capacitor t491d476k016as kemet c14, c17, c19 2.2 f, 100 v chip capacitors c3225x7r2a225kt tdk c15, c16, c18 220 pf chip capacitors atc100b221jt200xt atc c20 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp q1 rf high power transistor mrf6v3090nbr1 freescale r1 10 ? , 1/4 w chip resistor crcw120610rj vishay pcb 0.030 , r =3.5 ro4350b rogers mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 11 rf device data freescale semiconductor, inc. typical characteristics ? 470--860 mhz broadband reference circuit d g ps 24 450 0 60 850 23 21 19 50 40 30 f, frequency (mhz) figure 21. single--carrier dvb--t (8k ofdm) power gain and drain efficiency versus frequency (broadband reference circuit) g ps , power gain (db) d, drain efficiency (%) 22 20 900 20 18 10 500 550 600 650 700 750 800 v dd =50vdc,i dq = 450 ma, dvb--t (8k ofdm) 64 qam data carrier modulation, 5 symbols p out =4.5w 18 w 9w 4.5 w 9w 18 w 12 -- 4 5 0 f, frequency (mhz) figure 22. single--carrier dvb--t (8k ofdm) output par and imd shoulder versus frequency (broadband reference circuit) 450 -- 1 0 -- 2 0 -- 3 0 -- 4 0 output par (db) p out =4.5w 9w v dd =50vdc,i dq = 450 ma, dvb--t (8k ofdm) 64 qam data carrier modulation, 5 symbols 10 7 6 5 4 3 495 540 585 630 675 720 765 810 900 18 w 4.5 w 9w 18 w (1) intermodulation distortio n shoulder measurement made using delta marker at 4.2 mhz offset from center frequency. 26 0 70 p out , output power (watts) pulsed figure 23. pulsed power gain and drain efficiency versus output power (broadband reference circuit) 1 50 40 30 30 g ps d 60 v dd =50vdc,i dq = 450 ma pulse width = 100 sec, 10% duty cycle 25 24 23 21 20 19 10 100 200 620 mhz d , drain efficiency (%) g ps , power gain (db) par imd (1) imd, intermodulation distortion shoulder (dbc) 8 9 11 855 -- 5 -- 1 5 -- 2 5 -- 3 5 22 20 10 860 mhz 620 mhz 740 mhz 470 mhz 860 mhz 740 mhz 470 mhz 12 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 package dimensions mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 13 rf device data freescale semiconductor, inc. 14 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 15 rf device data freescale semiconductor, inc. 16 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 17 rf device data freescale semiconductor, inc. 18 rf device data freescale semiconductor, inc. mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2010 ? initial release of data sheet 1 dec. 2011 ? changed ?dvb--t ofdm? to ?dvb--t (8k ofdm)? throughout ? fig. 6, cw output power versus input power: corre cted typographical error in dbm to watts conversion values,p.5 ? fig. 7, cw power gain versus output power (narrowband test circuit): adjusted x--axis scale from 0 to 140 watts to 10 to 150 watts, p. 5 ? updated fig. 9, intermodulation distortion products versus output power, to correct x--axis pep power values,p.6 ? fig. 10, intermodulation distortion products ve rsus two--tone spacing: added f = 860 mhz to graph callouts, p. 6 ? updated fig. 11, two--tone power gain versus out put power, to correct x--axis pep power values, p. 6 ? updated fig. 12, third order intermodulation distortion versus output power, to correct x--axis pep power values, p. 6 ? fig. 18, mttf versus junction temperature -- c w: mttf end temperature on graph changed to match maximum operating junction temperature, p. 8 ? fig. 19, series equivalent source and load impedance: removed plot, p. 9 ? added 470--860 mhz broadband reference circuit frequency table, p. 9 ? added fig. 20, 470--860 mhz broadband 2 3 compact reference circuit component layout, p. 9 ? added table 7, 470--860 mhz broadband 2 3 reference circuit component designations and values, p. 10 ? added fig. 21, single--carrier dvb--t (8k ofdm) po wer gain and drain efficiency versus frequency (broadband reference circuit), p. 11 ? added fig. 22, single--carrier dvb--t (8k ofd m) output par and imd shoulder versus frequency (broadband reference circuit), p. 11 ? added fig. 23, pulsed power gain and drain effic iency versus output power (broadband reference circuit),p.11 mrf6v3090nr1 mrf6v3090nr5 mrf6v3090nbr1 mrf6v3090nbr5 19 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010--2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6v3090n rev. 1, 12/2011 |
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